052-6318 rev c 1 - 2014 product benefits ? soft switching - high q rr ? low noise switching - reduced ringing ? higher reliability systems ? minimizes or eliminates snubber product features ? ultrasoft recovery times (t rr ) ? popular to-247 package or surface mount d 3 pak package ? ultra low forward voltage ? low leakage current product applications ? anti-parallel diode -switchmode power supply -inverters ? applications - induction heating ? resonant mode circuits -zvs and zcs topologies - phase shifted bridge apt100dl60b(g) apt100dl60s(g) 600v 100a *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings: t c = 25c unless otherwise speciied. 1 - cathode 2 - anode back of case - cathode 1 2 t o -247 1 2 d 3 pak 1 2 (s) (b) microsemi website - http://www.microsemi.com ultrasoft recovery rectiier diode symbol characteristic / test conditions ratings unit v r maximum d.c. reverse voltage 600 volts v rrm maximum peak repetitive reverse voltage v rwm maximum working peak reverse voltage i f(av) maximum average forward current 1 (t c = 124c, duty cycle = 0.5) 100 amps i f(rms) rms forward currrent (square wave, 50% duty) 131 i fsm non-repetitive forward surge current (t j = 45c, 8.3 ms) 600 t j , t stg operating and storage junction temperature range -55 to 175 c t l lead temperature for 10 seconds 300 symbol characteristic / test conditions min typ max unit v f forward voltage i f = 100a 1.25 1.6 volts i f = 200a 2.0 i f = 100a, t j = 125c 1.28 i rm maximum reverse leakage current v r = 600v 25 a v r = 600v, t j = 125c 250 c t junction capacitance, v r = 200v 97 pf static electrical characteristics downloaded from: http:///
apt100dl60b_s(g) dynamic characteristics 052-6318 rev c 1 - 2014 thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speciications and information contained herein. symbol characteristic / test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -100a/s, v r = 30v, t j = 25c 45 ns t rr reverse recovery time i f = 100a, di f /dt = -200a/ s v r = 400v, t c = 25c 487 q rr reverse recovery charge 2328 nc i rrm maximum reverse recovery current 11 amps t rr reverse recovery time i f = 100a, di f /dt = -200a/s v r = 400v, t c = 125c 716 ns q rr reverse recovery charge 5954 nc i rrm maximum reverse recovery current 18 amps t rr reverse recovery time i f = 100a, di f /dt = -1000a/ s v r = 400v, t c = 125c 333 ns q rr reverse recovery charge 10002 nc i rrm maximum reverse recovery current 49 amps symbol characteristic / test conditions min typ max unit r jc junction-to-case thermal resistance 0.34 c/w w t package weight 0.22 oz 5.9 g torque maximum mounting torque 10 lbin 1.1 nm 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : z jc , thermal impedance (c/w) 1 continuous current limited by package lead temperature. downloaded from: http:///
052-6318 rev c 1 - 2014 apt100dl60b_s(g) typical performance curves 0 25 50 75 100 125 150 175 200 225 250 0 0.5 1 1.5 2 2.5 0 200 400 600 800 1000 0 200 400 600 800 1000 case temperature (c) figure 7, maximum average forward current vs. case temperature -di f /dt, current rate of change (a/s) figure 5, reverse recovery current vs. current rate of change 0 50 100 150 200 250 300 350 400 25 50 75 100 125 150 0 10 20 30 40 50 60 70 0 200 400 600 800 1000 0 0.2 0.3 0.4 0.5 1.0 1. 2 0 25 50 75 100 125 150 0 2000 4000 6000 8000 10000 12000 14000 0 200 400 600 800 1000 i rrm q rr t rr 100a 50a 50a 100a t j = 55c t j = 150c v f , anode-to-cathode voltage (v) figure 2, forward current vs. forward voltage i f , forward current (a) t j = 25c t j = 125c -di f /dt, current rate of change (a/s) figure 3, reverse recovery time vs. current rate of change t rr , collector current (a) q rr , reverse recovery charge (nc) t j , junction temperature (c) figure 6, dynamic parameters vs junction temperature k f , dynamic parameters (normalized to 1000a/s) i rrm , reverse recovery current (a) i f(av) (a) 0 100 200 300 400 500 600 700 800 900 1000 1 10 100 400 v r , reverse voltage (v) figure 8, junction capacitance vs. reverse voltage c j , junction capacitance (pf) t j = 125c v r = 400v t j = 125c v r = 400v -di f /dt, current rate of change (a/s) figure 4, reverse recovery charge vs. current rate of change t j = 125c v r = 400v 100a 50a 200a 200a 200a downloaded from: http:///
apt100dl60b_s(g) 052-6318 rev c 1 - 2014 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /d t adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 10. diode reverse recovery waveform deinition 5 1 2 3 4 i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve deined by i rrm and t rr. figure 9. diode test circuit 15.85 (.624)16.05(.632) 18.70 (.736)19.10 (.752) 1.15 (.045)1.45 (.057) 5.45 (.215) bsc (2 plcs. ) 4.90 (.193)5.10 (.201) 1.45 (.057) 1.60 (.063) 2.70 (.106)2.90 (.114) 0.40 (.016)0.65 (.026) dimensions in millimeters (inches ) heat sink (cathode) and leads are plated 2.40 (.094)2.70 (.106) (base of lead) cathode(heat sink) 1.90 (.075)2.10 (.083) cathode anode 0.020 (.001)0.250 (.010) 1.20 (.047)1.40 (.055) 12.40 (.488)12.70 (.500) 13.30 (.524)13.60(.535) 1.00 (.039)1.15(.045) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max . 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 10.90 (.430) bsc 3.50 (.138) 3.81 (.150) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) dimensions in millimeters and (inches ) cathode anode cathode e1 sac: tin, silver, copper e3 100% sn 1.016 (.040) to-247 package outline d 3 pak package outline downloaded from: http:///
052-6318 rev c 1 - 2014 apt100dl60b_s(g) the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted , distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information co ntained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, tr ade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expre ssly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in wri ting signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or imp lied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsem i. it is the customers and users re - sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such informat ion is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/le gal/tnc.asp disclaimer: downloaded from: http:///
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